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| a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ceo i c = 100 ma 25 v bv ces i c = 100 ma 55 v bv ebo i e = 5.0 ma 3.5 v h fe v ce = 5.0 v i c = 1.0 a 20 100 --- p g c v cc = 25 v p out = 85 w f = 900 mhz i cq = 200 ma 8.5 50 9.5 db % v cc = 25 v p out = 60 w f = 900 mhz i cq = 200 ma 10:1 --- npn silicon rf power transistor PTB20111 description: the asi PTB20111 is designed for general purpose class ab power amplifier applications up to 900 mhz. features: ? 25 w, 860-900 mhz ? silicon nitride passivated ? omnigold ? metalization system maximum ratings i c 20 a v cbo 65 v p diss 159 w @ t c = 25 c t j -40 c to +150 c t stg -40 c to +150 c jc 1.1 c/w package style .400 2l flg 1 = collector 2 = emitter 3 = base
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